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| BUK755R4-100E_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
103
IAL
(A)
102
003aah029
(1)
10
(2)
1
(3)
10-1
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
Limit RDSon = VDS / ID
102
10
DC
1
tp = 10 us
100 us
1 ms
10 ms
100 ms
003aaf633
10-1
1
10
102
103
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
vertical in free air
BUK755R4-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
Min Typ Max Unit
-
-
0.43 K/W
-
60
-
K/W
© NXP B.V. 2012. All rights reserved
4 / 13
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