BUK7227-100B Datasheet, PDF (7/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7227-100B
TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
2
1
max
typ
min
03no98
10-1
ID
(A)
10-2
10-3
10-4
10-5
03aa35
min typ
max
0
-60
10
80
150
220
Tj (°C)
10-6
0
2
4
6
VGS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
40
gfs
(S)
30
20
10
03nl25
3000
C
(pF)
2000
1000
Ciss
Coss
Crss
03nl30
0
0
20
40 _{ID (A)} 60
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
0
10-1
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 12232
Product data
Rev. 01 — 26 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
7 of 12