BUK7227-100B Datasheet, PDF (6/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7227-100B
TrenchMOS™ standard level FET
140
ID
(A)
105
Label is VGS (V)
20
12
10
03nl28
9
8.5
8
7.5
7
35
RDSon
(mΩ)
30
03nl27
70
6.5
6
35
5.5
5
4.5
0
0
2
4
6
8
10
VDS (V)
25
20
5
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03nl29
60
2.8
RDSon
(mΩ)
Label is VGS (V)
6 6.5 7
8 10 20
a
50
2.1
40
1.4
30
0.7
20
03np02
10
0
35
70
105
140
ID (A)
0
-60
10
80
150
220
Tj (°C)
T_j = 25 °C; t_p = 300 µs
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12232
Product data
Rev. 01 — 26 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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