BUK7227-100B Datasheet, PDF (3/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7227-100B
TrenchMOS™ standard level FET
120
Pder
(%)
80
03no96
50
ID
(A)
40
30
03nl33
20
40
10
0
0
50
100
150
200
Tmb (°C)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
V_GS ≥ 10 V
100
150
200
Tmb (°C)
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
03nl31
ID
(A)
Limit RDSon = VDS / ID
102
tp = 10 µ s
10
1
1
DC
10
100 µ s
1 ms
10 ms
100 ms
102
VDS (V)
103
T_mb = 25 °C; I_DM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12232
Product data
Rev. 01 — 26 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3 of 12