BUK7222-55A_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7222-55A
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
45
R_DSon
(mΩ)
40
5.5 6 6.5 7
35
30
25
20
15
0
50
03nc64
8 V_GS (V) = 10
100
150
I_D (A)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
03ne89
2
C_iss, ²⁵⁰⁰
03nc65
a
C_oss,
C_rss
C_iss
(pF) ₂₀₀₀
1.5
C_oss
1500
1
C_rss
1000
0.5
500
0
-60
0
60
120
180
Tj (°C)
0
10^−2
10^−1
1
10
10²
V_DS (V)
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7222-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 February 2011
© NXP B.V. 2011. All rights reserved.
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