BUK7222-55A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7222-55A
N-channel TrenchMOS standard level FET
30
R_DSon
(mΩ)
25
03nc62
20
15
10
5
10
15
20
25
V_GS (V)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 5. Drain-source on-state resistance as a function Fig 6. Sub-threshold drain current as a function of
of drain current; typical values
gate-source voltage
25
g_fs
(S)
20
15
03nc60
10
V_GS
(V)
8
6
V_DD = 14 V
03nc59
V_DD = 44 V
10
4
5
2
0
0
20
40
60
80
I_D (A)
0
0
10
20
30
40
Q_G (nC)
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Gate-source voltage as a function of turn-on
gate charge; typical values
BUK7222-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 February 2011
© NXP B.V. 2011. All rights reserved.
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