BUK714R1-40BT_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK714R1-40BT
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = -10 V;
Q_r
recovered charge
V_DS = 30 V; T_j = 25 °C
Min Typ Max Unit
-
0.85 1.2 V
-
70
-
ns
-
55
-
nC
300
20
ID
10
(A)
7
6.5
200
03nq15
Label is VGS (V)
6
100
5.5
5
4.5
0
0
2
4
6
8
10
VDS (V)
12
RDSon
(mΩ)
8
03nq17
4
0
4
8
12
16
20
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
20
03nq16
2
RDSon
Lable is VGS (V)
6
a
(mW)
15
6.5
1.5
03aa27
10
5
0
0
7
8 ₁₀
20
100
200 _{ID (A)} 300
1
0.5
0
-60
0
60
120 _{Tj (°C)} 180
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK714R1-40BT_2
Product data sheet
Rev. 02 — 10 February 2009
© NXP B.V. 2009. All rights reserved.
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