BUK714R1-40BT_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK714R1-40BT
N-channel TrenchPLUS standard level FET
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
200
03nm69
ID
(A)
150
100
50
Capped at 75 A due to package
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
10
limit RDSon = VDS/ ID
Capped at 75 A due to package
D.C.
03nm68
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
1
10-1
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK714R1-40BT_2
Product data sheet
Rev. 02 — 10 February 2009
© NXP B.V. 2009. All rights reserved.
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