BUK714R1-40BT_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

BUK714R1-40BT
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The
devices include TrenchPLUS diodes for temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Electrical Power Assisted Steering
(EPAS)
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
40 V
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; [1] -
-
75 A
see Figure 2; see Figure 3
V_GS = 10 V; T_mb = 100 °C; [1] -
-
75 A
see Figure 2
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 1
-
-
272 W
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 50 A;
T_j = 25 °C; see Figure 7;
see Figure 8
-
3.4 4.1 mΩ
[1] Continuous current is limited by package.