English
Language : 

BUK663R5-55C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET
◁
NXP Semiconductors
BUK663R5-55C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
Min Typ Max Unit
-
0.85 1.2 V
-
65
-
ns
-
148 -
nC
150
gfs
(S)
120
003aae388
90
60
30
0
0
10
20
30
40
50
ID (A)
100
6.0
ID
(A)
8.0
80
10
4.5
5.0
003aae389
VGS (V) =
4.0
60
40
20
0
0
3.8
3.6
3.4
3.3
0.2
0.4
0.6
0.8
1
VDS (V)
Fig 6. Forward transconductance as a function of
drain current; typical values
80
ID
(A)
60
003aae390
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
16
RDSon
(mΩ)
12
003aae391
40
Tj = 175 °C
8
Tj = 25 °C
20
4
0
0
1
2
3
4
VGS (V)
0
0
4
8
12
16
VGS (V)
Fig 8. Transfer characteristics: drain current as a
Fig 9. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
BUK663R5-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 December 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
 ▷