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BUK663R5-55C_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET
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NXP Semiconductors
BUK663R5-55C
N-channel TrenchMOS intermediate level FET
103
ID
(A)
102
10
1
10−1
10−1
Limit RDSon = VDS / ID
1
DC
10
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tp =10 μs
100 μs
1 ms
10 ms
100 ms
102
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
see Figure 5
Min Typ Max Unit
-
-
0.57 K/W
1
Zth(j-mb)
(K/W)
10−1
δ = 0.5
0.2
0.1
0.05
0.02
10−2
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P
tp
δ= T
single shot
10−3
10−6
10−5
10−4
10−3
10−2
tp
t
T
10−1
tp (s )
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK663R5-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 December 2010
© NXP B.V. 2010. All rights reserved.
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