BUK663R5-55C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK663R5-55C
N-channel TrenchMOS intermediate level FET
200
I_D
(A)
160
120
80
40
0
0
003aac796
(1)
50
100
150
200
T_mb (°C)
120
P_der
(%)
80
03aa16
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10³
I_AL
(A)
10²
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae402
(1)
(2)
(3)
10^−1
10^−3
10^−2
10^−1
1
10
t_AL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK663R5-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 December 2010
© NXP B.V. 2010. All rights reserved.
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