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BTA208X-1000B Datasheet, PDF (7/13 Pages) NXP Semiconductors – Three quadrant triacs high commutation
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NXP Semiconductors
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 10 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 1000 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 670 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit; Fig. 12
BTA208X-1000B
3Q Hi-Com Triac
Min Typ Max Unit
2
18
50
mA
2
21
50
mA
2
34
50
mA
-
31
60
mA
-
34
90
mA
-
30
60
mA
-
31
60
mA
-
1.3 1.65 V
-
0.7 1
V
0.25 0.4 -
V
-
0.1 0.5 mA
1000 4000 -
V/µs
15
38
-
A/ms
BTA208X-1000B
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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