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BTA208X-1000B Datasheet, PDF (3/13 Pages) NXP Semiconductors – Three quadrant triacs high commutation
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NXP Semiconductors
BTA208X-1000B
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2;
Fig. 3
ITSM
non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t
I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IT = 0.2 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
25
IT(RMS)
(A)
20
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10
IT(RMS)
(A)
8
Min Max Unit
-
1000 V
-
8
A
-
65
A
-
71
A
-
21
A2s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
125 °C
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73 °C
15
6
10
4
5
2
010- 2
10- 1
1
10
surge duration (s)
f = 50 Hz; Th = 73 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
0
- 50
0
50
100
150
Th (°C)
Fig. 2. RMS on-state current as a function of heatsink
temperature; maximum values
BTA208X-1000B
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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