BFU790F Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU790F
NPN wideband silicon germanium RF transistor
40
G
(dB)
30
20
MSG
001aam878
40
G
(dB)
30
20
MSG
001aam879
10
IS21I²
G_p(max)
10
IS21I²
G_p(max)
0
0
2
4
6
8
10
f (GHz)
0
0
2
4
6
8
10
f (GHz)
V_CE = 1 V; I_C = 20 mA; T_amb = 25 °C.
V_CE = 1 V; I_C = 85 mA; T_amb = 25 °C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
1.0
NF_min
(dB)
0.8
001aam880
1.0
NF_min
(dB)
0.8
001aam881
0.6
(1)
0.6
(2)
0.4
0.4
(3)
0.2
0.2
0
0
10
20
30
40
I_C (mA)
V_CE = 2 V; T_amb = 25 °C.
(1) f = 2.4 GHz
(2) f = 1.8 GHz
(3) f = 1.5 GHz
Fig 9. Minimum noise figure as a function of
collector current; typical values
0
0
1
2
3
f (GHz)
I_C = 20 mA; V_CE = 2 V; T_amb = 25 °C.
Fig 10. Minimum noise figure as a function of
frequency; typical values
BFU790F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 April 2011
© NXP B.V. 2011. All rights reserved.
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