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| BFU790F Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor | |||
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NXP Semiconductors
BFU790F
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)CBO collector-base breakdown voltage IC = 2.5 μA; IE = 0 mA
V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 mA
IC
collector current
ICBO
collector-base cut-off current
IE = 0 mA; VCB = 4.5 V
hFE
DC current gain
IC = 10 mA; VCE = 2 V
CCES collector-emitter capacitance
VCB = 2 V; f = 1 MHz
CEBS emitter-base capacitance
VEB = 0.5 V; f = 1 MHz
CCBS collector-base capacitance
VCB = 2 V; f = 1 MHz
fT
transition frequency
IC = 100 mA; VCE = 1 V; f = 2 GHz;
Tamb = 25 °C
Gp(max) maximum power gain
IC = 85 mA; VCE = 1 V; Tamb = 25 °C
f = 1.5 GHz
10 -
-V
2.8 -
-V
- 50 100 mA
--
100 nA
235 410 585
- 527 - fF
- 2817 - fF
- 514 - fF
- 25 - GHz
[1]
- 21 - dB
f = 1.8 GHz
- 19.5 - dB
f = 2.4 GHz
- 16.5 - dB
|s21|2
insertion power gain
IC = 85 mA; VCE = 1 V; Tamb = 25 °C
f = 1.5 GHz
- 14.5 - dB
f = 1.8 GHz
- 13 - dB
f = 2.4 GHz
- 10.5 - dB
NF
noise figure
IC = 20 mA; VCE = 2 V; ÎS = Îopt; Tamb = 25 °C
f = 1.5 GHz
- 0.40 - dB
f = 1.8 GHz
- 0.40 - dB
f = 2.4 GHz
- 0.50 - dB
Gass
associated gain
IC = 20 mA; VCE = 2 V; ÎS = Îopt; Tamb = 25 °C
f = 1.5 GHz
- 19 - dB
f = 1.8 GHz
- 17.5 - dB
f = 2.4 GHz
- 15.7 - dB
PL(1dB) output power at 1 dB gain
compression
IC = 60 mA; VCE = 2.5 V; ZS = ZL = 50 Ω;
Tamb = 25 °C
f = 1.5 GHz
- 20 - dBm
f = 1.8 GHz
- 20 - dBm
f = 2.4 GHz
- 19 - dBm
IP3
third-order intercept point
IC = 30 mA; VCE = 2.5 V; ZS = ZL = 50 Ω;
Tamb = 25 °C
f = 1.5 GHz
- 33 - dBm
f = 1.8 GHz
- 33 - dBm
f = 2.4 GHz
- 34 - dBm
f = 5.8 GHz
- 33 - dBm
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
BFU790F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 22 April 2011
© NXP B.V. 2011. All rights reserved.
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