BFU790F Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU790F
NPN wideband silicon germanium RF transistor
800
C_CBS
(fF)
600
400
200
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30
fT
(GHz)
20
10
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0
0
1
2
3
4
5
V_CB (V)
Fig 4.
f = 1 MHz, T_amb = 25 °C.
Collector-base capacitance as a function of
collector-base voltage; typical values
25
G
(dB)
20
MSG
15
0
0
20
40
60
80
100
I_C (mA)
Fig 5.
V_CE = 1 V; f = 2 GHz; T_amb = 25 °C.
Transition frequency as a function of collector
current; typical values
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(1)
(2)
(3)
G_p(max)
10
5
0
0
20
40
60
V_CE = 1 V; T_amb = 25 °C.
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
Fig 6. Gain as a function of collector current; typical value
80
100
I_C (mA)
BFU790F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 April 2011
© NXP B.V. 2011. All rights reserved.
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