BFM520 Datasheet, PDF (7/10 Pages) NXP Semiconductors – Dual NPN wideband transistor

Philips Semiconductors
Dual NPN wideband transistor
Product specification
BFM520
4
handbook, halfpage
F
(dB)
3
2
1
MRA714
f = 2000 MHz
11000001M00Hz
900 MHz
500 MHz
0
1
10
IC (mA)
10²
V_CE = 3 V.
Fig.10 Minimum noise figure as a function of
collector current, typical values.
20
handbook, halfpage
G _ass
(dB)
15
10
5
MLB585
f = 900 MHz
1000 MHz
2000 MHz
0
1
10
10 ²
IC (mA)
V_CE = 3 V.
Fig.11 Associated available gain as a function of
collector current, typical values.
4
handbook, halfpage
F
(dB)
3
MRA715
handbook, ²h⁰alfpage
G _ass
(dB)
I _C = 5 mA
15
20 mA
MLB586
2
IC =
20 mA
1
5 mA
0
10²
10³
f (MHz)
10⁴
V_CE = 3 V.
Fig.12 Minimum noise figure as a function of
frequency, typical values.
1996 Oct 08
10
5
0
10 ²
10 ³
10 ⁴
f (MHz)
V_CE = 3 V.
Fig.13 Associated available gain as a function of
frequency, typical values.
7