BFM520 Datasheet, PDF (6/10 Pages) NXP Semiconductors – Dual NPN wideband transistor

Philips Semiconductors
Dual NPN wideband transistor
Product specification
BFM520
handbook,²h⁰alfpage
gain
(dB)
16
12
8
4
0
0
MSG/Gmax
GUM
MGG203
10
20 _{IC (mA)} 30
f = 900 MHz; V_CE = 3 V.
Fig.6 Gain as a function of collector current;
typical values.
handbook,²h⁰alfpage
gain
(dB)
16
12
8
4
0
0
MGG204
MSG/Gmax
GUM
10
20 _{IC (mA)} 30
f = 2 GHz; V_CE = 3 V.
Fig.7 Gain as a function of collector current;
typical values.
50
handbook, halfpage
gain
(dB)
40
30
20
GUM
MSG/Gmax
MGG205
10
0
10
10²
10³
10⁴
f (MHz)
50
handbook, halfpage
gain
(dB)
40
GUM
MSG/Gmax
30
20
10
0
10
10²
MGG206
10³
10⁴
f (MHz)
I_C = 5 mA; V_CE = 3 V.
Fig.8 Gain as a function of frequency; typical
values.
1996 Oct 08
I_C = 20 mA; V_CE = 3 V.
Fig.9 Gain as a function of frequency; typical
values.
6