BFM520 Datasheet, PDF (5/10 Pages) NXP Semiconductors – Dual NPN wideband transistor

Philips Semiconductors
Dual NPN wideband transistor
Product specification
BFM520
1.5
handbook, halfpage
Ptot
(mW)
double loaded
1
single loaded
0.5
MBG228
handbook¹,²halfpage
fT
(GHz)
8
4
MRA705
VCE = 6V
VCE = 3V
0
0
50
100
150
200
Ts (^oC)
Fig.2 Power derating as a function of soldering
point temperature; typical values.
0
10^−1
1
10 _{IC (mA)} 10²
f = 1 GHz; T_amb = 25 °C.
Fig.3 Transition frequency as a function of
collector current; typical values.
250
handbook, halfpage
hFE
200
150
100
50
010_−2
10^−1
1
MRA703
10 _{IC (mA)} 10²
0.6
handbook, halfpage
Cre
(pF)
0.4
0.2
0
0
4
MRA704
8 _{VCB (V)} 12
V_CE = 6 V.
Fig.4 DC current gain as a function of collector
current; typical values.
I_C = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
1996 Oct 08
5