BFG540 Datasheet, PDF (7/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540; BFG540/X;
BFG540/XR
handbook^−,²h⁰alfpage
dim
(dB)
−30
MEA973
−40
−50
−60
−70
10
20
30
40
50
60
IC (mA)
handbook^−,²h⁰alfpage
d2
(dB)
−30
MEA972
−40
−50
−60
−70
10
20
30
40
50
60
IC (mA)
Fig.11 Intermodulation distortion as a function of
collector current.
Fig.12 Second order intermodulation distortion as
a function of collector current.
handbook, h⁵alfpage
Fmin
(dB)
4
3
2000 MHz
2
1000 MHz
900 MHz
1
500 MHz
0
1
Gass
MRA760
20
Gass
f = 900 MHz _(dB)
15
1000 MHz
2000 MHz ₁₀
5
Fmin
0
10
IC (mA)
−5
10²
handbook, h⁵alfpage
Fmin
(dB)
4
IC = 10 mA
40 mA
Gass
MRA761
20
Gass
(dB)
15
3
10
2
5
40 mA
Fmin
10 mA
1
0
0
−5
10²
10³
10⁴
f (MHz)
V_CE = 8 V.
Fig.13 Minimum noise figure and associated
available gain as functions of collector
current.
V_CE = 8 V.
Fig.14 Minimum noise figure and associated
available gain as functions of frequency.
2000 May 23
7