BFG540 Datasheet, PDF (5/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540; BFG540/X;
BFG540/XR
600
handbook, halfpage
Ptot
(mW)
400
MBG249
200
0
0
50
100
150
200
Ts (^o C)
V_CE ≤ 10 V.
Fig.3 Power derating curve.
250
handbook, halfpage
hFE
200
150
100
50
0
10^−2
10^−1
1
MRA749
10
10²
IC (mA)
V_CE = 8 V; T_j = 25 °C.
Fig.4 DC current gain as a function of collector
current.
handbook, h¹alfpage
Cre
(pF)
0.8
0.6
0.4
0.2
0
0
4
MRA750
8
12
VCB (V)
handbook,¹h²alfpage
fT
(GHz)
8
4
0
10^−1
1
MRA751
VCE = 8 V
VCE = 4 V
10
10²
IC (mA)
I_C = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
2000 May 23
f = 1 GHz; T_amb = 25 °C.
Fig.6 Transition frequency as a function of
collector current.
5