BFG540 Datasheet, PDF (3/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540; BFG540/X;
BFG540/XR
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CES
I_C
P_tot
h_FE
C_re
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
G_UM
maximum unilateral power gain
s₂₁ ²
F
insertion power gain
noise figure
CONDITIONS
open emitter
R_BE = 0
T_s ≤ 60 °C; note 1
I_C = 40 mA; V_CE = 8 V; T_j = 25 °C
I_C = 0; V_CE = 8 V; f = 1 MHz
I_C = 40 mA; V_CE = 8 V; f = 1 GHz;
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz;
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 2 GHz;
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz;
T_amb = 25 °C
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
f = 900 MHz; T_amb = 25 °C
Γ_s = Γ_opt; I_C = 40 mA; V_CE = 8 V;
f = 900 MHz; T_amb = 25 °C
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
f = 2 GHz; T_amb = 25 °C
MIN.
−
−
−
−
100
−
−
−
−
15
−
−
−
TYP.
−
−
−
−
120
0.5
9
18
11
16
1.3
1.9
2.1
MAX. UNIT
20
V
15
V
120 mA
400 mW
250
−
pF
−
GHz
−
dB
−
dB
−
dB
1.8 dB
2.4 dB
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R_BE = 0
open collector
T_s ≤ 60 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
20
V
15
V
2.5 V
120 mA
400 mW
+150 °C
150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point T_s ≤ 60 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
290
UNIT
K/W
2000 May 23
3