BFG135 Datasheet, PDF (7/16 Pages) NXP Semiconductors – NPN 7GHz wideband transistor

NXP Semiconductors
NPN 7GHz wideband transistor
Product specification
BFG135
handbook,⁴h⁵alfpage
d _im
(dB)
50
MBB292
55
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 900 mV; T_amb = 25 C;
f_(p+qr) = 443.25 MHz.
Fig.8 Intermodulation distortion as a function of
collector current.
handbook,⁴h⁵alfpage
d _im
(dB)
50
MBB293
55
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 850 mV; T_amb = 25 C;
f_(p+qr) = 793.25 MHz.
Fig.9 Intermodulation distortion as a function of
collector current.
45
handbook, halfpage
d2
(dB)
50
MBB291
45
handbook, halfpage
d2
(dB)
50
MBB290
55
55
60
60
65
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 50 dBmV; T_amb = 25 C;
f_(p+q) = 450 MHz.
Fig.10 Second order intermodulation distortion as
a function of collector current.
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 50 dBmV; T_amb = 25 C
f_(p+q) = 810 MHz.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1995 Sep 13
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