BFG135 Datasheet, PDF (2/16 Pages) NXP Semiconductors – NPN 7GHz wideband transistor

NXP Semiconductors
NPN 7GHz wideband transistor
Product specification
BFG135
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT223 envelope,
intended for wideband amplifier
applications. The small emitter
structures, with integrated
emitter-ballasting resistors, ensure
high output voltage capabilities at a
low distortion level.
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
lfpage
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
G_UM
V_o
collector-base voltage
open emitter

collector-emitter voltage open base

DC collector current

total power dissipation
up to T_s = 145 C (note 1)

DC current gain
I_C = 100 mA; V_CE = 10 V; T_j = 25 C 80
transition frequency
I_C = 100 mA; V_CE = 10 V; f = 1 GHz; 
T_amb = 25 C
maximum unilateral power I_C = 100 mA; V_CE = 10 V; f = 500 MHz; 
gain
T_amb = 25 C
I_C = 100 mA; V_CE = 10 V; f = 800 MHz; 
T_amb = 25 C
output voltage
d_im = 60 dB; I_C = 100 mA; V_CE = 10 V; 
R_L = 75 ; T_amb = 25 C;
f_(p+qr) = 793.25 MHz
TYP.




130
7
16
12
850
MAX.
25
15
150
1





UNIT
V
V
mA
W
GHz
dB
dB
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 145 C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
1995 Sep 13
2
MIN.





65

MAX.
25
15
2
150
1
150
175
UNIT
V
V
V
mA
W
C
C