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BFG135 Datasheet, PDF (3/16 Pages) NXP Semiconductors – NPN 7GHz wideband transistor | |||
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NXP Semiconductors
NPN 7GHz wideband transistor
Product specification
BFG135
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering
point
up to Ts = 145 ï°C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL
RESISTANCE
30 K/W
CHARACTERISTICS
Tj = 25 ï°C unless otherwise specified.
SYMBOL
ICBO
hFE
Cc
Ce
Cre
fT
GUM
Vo
d2
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain
output voltage
second order intermodulation
distortion
CONDITIONS
IE = 0; VCB = 10 V
IC = 100 mA; VCE = 10 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 1 MHz
IC = 100 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 ï°C
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 ï°C
IC = 100 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 ï°C
note 1
note 2
IC = 90 mA; VCE = 10 V;
VO = 50 dBmV; Tamb = 25 ï°C;
f(p+q) = 450 MHz;
fp = 50 MHz; fq = 400 MHz
IC = 90 mA; VCE = 10 V;
VO = 50 dBmV; Tamb = 25 ï°C;
f(p+q) = 810 MHz;
fp = 250 MHz; fq = 560 MHz
MIN.
ï
80
ï
ï
ï
ï
TYP.
ï
130
2
7
1.2
7
ï
16
ï
12
ï
900
ï
850
ï
ï58
ï
ï53
MAX. UNIT
1
ïA
ï
ï
pF
ï
pF
ï
pF
ï
GHz
ï
dB
ï
dB
ï
mV
ï
mV
ï
dB
ï
dB
Notes
1. dim = ï60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ï; Tamb = 25 ï°C;
Vp = Vo at dim = ï60 dB; fp = 445.25 MHz;
Vq = Vo ï6 dB; fq = 453.25 MHz;
Vr = Vo ï6 dB; fr = 455.25 MHz;
measured at f(p+qïr) = 443.25 MHz.
2. dim = ï60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ï; Tamb = 25 ï°C;
Vp = Vo at dim = ï60 dB; fp = 795.25 MHz;
Vq = Vo ï6 dB; fq = 803.25 MHz;
Vr = Vo ï6 dB; fr = 805.25 MHz;
measured at f(p+qïr) = 793.25 MHz.
1995 Sep 13
3
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