BFG10W Datasheet, PDF (7/9 Pages) NXP Semiconductors – UHF power transistor

Philips Semiconductors
UHF power transistor
Product specification
BFG10W/X
List of components (see Fig.7)
COMPONENT
TR1
C1, C6, C7, C8
C2
C3
C4
C5
C9, C10
L1, L2
R1, R2
R3, R4
DESCRIPTION
bias transistor, BC548 or equivalent
capacitor; notes 2 and 3
capacitor; note 2
capacitor; note 2
capacitor; note 2
capacitor; note 2
Philips capacitor
RF choke, Philips
metal film resistor
metal film resistor
VALUE
note 1
24 pF
0.4 pF
2.4 pF
0.5 pF
1.2 pF
1500 µF, 10 V
75 Ω
10 Ω
Notes
1. V_BE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
DIMENSIONS CATALOGUE No.
2222 032 14152
4330 030 36301
handbook, full pagewidth
R1
+Vbias
R2
L1
TR1
C7
C1
C2
C3
DUT
L2
C9
C8
+VCC
C10
C4 C5
C6
MBG429
PCB RT5880, thickness 0.79 mm.
Fig.7 Class-AB test circuit at f = 1.9 GHz.
1995 Sep 22
7