BFG10W Datasheet, PDF (5/9 Pages) NXP Semiconductors – UHF power transistor

Philips Semiconductors
UHF power transistor
Product specification
BFG10W/X
APPLICATION INFORMATION
RF performance at T_amb = 25 °C in a common-emitter test circuit.
MODE OF OPERATION
f
V_CE
(GHz)
(V)
Pulsed, class-AB, duty cycle: < 1 : 2; t_p = 10 ms
1.9
3.6
Pulsed, class-AB, duty cycle: < 1 : 8; t_p = 5 ms
0.9
6
0.9
6
P_L
(mW)
200
650
360
G_p
(dB)
≥5; typ. 7
≥10
≥12.5
η_c
(%)
≥50; typ. 60
≥50
≥50
Ruggedness in class-AB operation
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; t_p = 4.6 ms; duty cycle of 1 : 8
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; t_p = 10 ms; duty cycle of 1 : 2.
handbook,¹h⁰alfpage
Gp
(dB)
8
6
4
MLC820
100
η_c
η_c
(%)
80
Gp
60
40
2
20
0
0
0
100
200
300
400
500
PL (mW)
Pulsed, class-AB operation.
V_CE = 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2.
Circuit optimized for P_L = 200 mW.
Fig.4 Power gain and efficiency as functions
of load power; typical values.
handbook,¹h⁶alfpage
Gp
(dB)
Gp
12
η_c
8
MBG194
80
η_c
(%)
60
40
4
20
0
20
0.3
0.5
0.7
0.9
1.1
PL (mW)
Pulsed, class-AB operation.
V_CE = 6 V; f = 900 MHz; duty cycle < 1 : 8.
Circuit optimized for P_L = 600 mW.
Fig.5 Power gain and efficiency as functions
of load power; typical values.
1995 Sep 22
5