BFG10W Datasheet, PDF (3/9 Pages) NXP Semiconductors – UHF power transistor

Philips Semiconductors
UHF power transistor
Product specification
BFG10W/X
CHARACTERISTICS
T_j = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CES
h_FE
C_c
C_re
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
open emitter; I_C = 0.1 mA
open base; I_C = 5 mA
open collector; I_E = 0.1 mA
V_CE = 6 V; V_BE = 0
I_C = 50 mA; V_CE = 5 V
I_E = i_e = 0; V_CB = 6 V; f = 1 MHz
I_C = 0; V_CE = 6 V; f = 1 MHz
MIN.
20
10
2.5
−
25
−
−
MAX.
−
−
−
100
−
3
2
UNIT
V
V
V
µA
pF
pF
handbook¹, ⁰fu³ll pagewidth
Zth _j-a
(K/W)
10²
10
δ=1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
1
10^−6
10^−5
10^−4
10^−3
MBG431
10^−2
P
δ
=
tp
T
tp
t
T
10^−1
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22
3