SA3601 Datasheet, PDF (6/14 Pages) NXP Semiconductors – Low voltage dual-band RF front-end

Philips Semiconductors
Low voltage dual-band RF front-end
Preliminary specification
SA3601
ABSOLUTE MAXIMUM RATINGS¹
SYMBOL
PARAMETER
V_CC
Supply voltage
V_IN
Voltage applied to any other pin
P_D
Power dissipation, T_amb = +25 °C (still air)
T_{J MAX}
Maximum junction temperature
P_MAX
Power input/output
I_MAX
DC current into any I/O pin
T_STG
Storage temperature range
T_O
Operating temperature
NOTES:
1. IC is protected for ESD voltages up to 500 V (human body model).
MIN.
–0.3
–0.3
–10
–65
–40
LIMITS
MAX.
+4.5
V_CC+0.3
TBD
150
+20
+10
+150
+85
UNITS
V
V
mW
°C
dBm
mA
°C
°C
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
V_CC = +3.0 V, T_amb = +25°C; unless otherwise specified
SYMBOL
PARAMETER
I_CC
V_IH
V_IL
I_BIAS
Sleep mode
Tx mode, LO lowband buffer
Rx mode cellular, low gain
Rx mode cellular, high gain
Rx mode PCS, low gain, x2
Rx mode PCS, high gain, x2
Rx mode PCS, low gain, no x2
Rx mode PCS, high gain, no x2
Input HIGH voltage
Input LOW voltage
Input bias current
TEST CONDITIONS
PD1 PD2 PD3
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Logic 1 or logic 0
TESTER LIMITS
MIN
TYP
MAX
0.1
1
4.3
5.5
10.1
12
14
16.5
17.5
21
23.5
28
10
TBD
15.5
TBD
0.5xV_CC
–0.3
–5
V_CC+0.3
0.2xV_CC
+5
UNIT
µA
mA
mA
mA
mA
mA
mA
mA
V
V
µA
1999 Nov 09
6