SA3601 Datasheet, PDF (2/14 Pages) NXP Semiconductors – Low voltage dual-band RF front-end

Philips Semiconductors
Low voltage dual-band RF front-end
Preliminary specification
SA3601
DESCRIPTION
The SA3601 is an integrated dual-band RF front-end that operates at
both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and
is designed in a 20 GHz f_T BiCMOS process—QUBiC2. The
low-band (LB) receiver is a combined low-noise amplifier (LNA) and
mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB
of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer has a
9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm.
The high-band (HB) receiver is a combined low-noise amplifier (LNA)
and mixer, with the low-band and high-band mixers sharing the same
mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of
gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a
8.5 dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.
APPLICATIONS
• 800 to 1000 MHz analog and digital receivers
• 1800 to 2000 MHz digital receivers
• Portable radios
• Mobile communications equipment
PIN CONFIGURATION
FEATURES
• Low current consumption: LB I_CC = 14 mA; HB I_CC = 15.5 mA
• Outstanding low- and high-band noise figure
• LNAs with gain control (30 dB gain step)
• LO input and output buffers
• Frequency doubler
• On chip logic for network selection and power down
• Very small outline package
HBLNA_IN
GND
V_CC
HBMXR+_IN
HBMXR–_IN
PD1
V_CC
GND
1 32 31 30 29 28 27 26 25
2
24
3
23
4
22
5
TOP VIEW
21
6
20
7
19
8
18
9 10 11 12 13 14 15 16 17
GND
V_CC
LBMXR_IN
GND
MXR+_OUT
MXR–_OUT
GND
LBVCO_IN
SR02237
ORDERING INFORMATION
TYPE NUMBER
SA3601
NAME
BCC32++
PACKAGE
DESCRIPTION
HBCC32: plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm
VERSION
SOT560-1
1999 Nov 09
2