SA3601 Datasheet, PDF (3/14 Pages) NXP Semiconductors – Low voltage dual-band RF front-end

Philips Semiconductors
Low voltage dual-band RF front-end
Preliminary specification
SA3601
PIN DESCRIPTIONS
PIN
NO.
PIN NAME
DESCRIPTION
PIN
NO.
PIN NAME
DESCRIPTION
1 HBLNA_IN
Highband LNA input
17 LBVCO_IN
Lowband VCO input
2 GND
Ground
18 GND
Ground
3
V_CC
4 HBMXR+_IN
Power supply
Highband mixer positive input
19 MXR–_OUT
20 MXR+_OUT
Mixer negative output
Mixer positive output
5 HBMXR–_IN
Highband mixer negative input
21 GND
Ground
6 PD1
Power down control 1
22 LBMXR_IN
Lowband mixer input
7
V_CC
8 GND
Power supply
Ground
23 V_CC
24 GND
Power supply
Ground
9 PD2
Power down control 2
25 LBLNA_IN
Lowband LNA input
10 GND
Ground
26 GND
Ground
11 GND
12 LBVCO_OUT
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{13 GND}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{14 HBVCO_IN}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{15 PD3}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{16 GND}
Ground
Lowband VCO buffered output
Ground
Highband VCO input
Power down control 3
Ground
27 GND
28 LBLNA_OUT
29 GND
30 HBLNA_OUT
31 GND
32 GND
Ground
Lowband LNA output
Ground
Highband LNA output
Ground
Ground
BLOCK DIAGRAM
1999 Nov 09
HBLNA_IN
GND
V_CC
HBMXR+_IN
HBMXR–_IN
PD1
V_CC
GND
1 ^{32 31 30 29 28 27 26} 25
2
24
3
23
4
22
TOP VIEW
5
21
6
20
7
x2
19
8
18
GND
V_CC
LBMXR_IN
GND
MXR+_OUT
MXR–_OUT
GND
9 10 11 12 13 14 15 16 17
LBVCO_IN
Figure 1. Block Diagram
3
SR02238