PSMN030-150P Datasheet, PDF (6/8 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PSMN030-150P
Gate-source voltage, VGS (V)
16
ID = 55.5A
14
Tj = 25 C
12
VDD = 30 V
10
8
VDD =120 V
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Gate charge, QG (nC)
Fig.13. Typical turn-on gate-charge characteristics
V_GS = f(Q_G)
Source-Drain Diode Current, IF (A)
50
VGS = 0 V
45
40
35
175 C
30
Tj = 25 C
25
20
15
10
5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Source-Drain Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
Maximum Avalanche Current, IAS (A)
100
25 C
10
Tj prior to avalanche = 150 C
1
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Fig.15. Maximum permissible non-repetitive
avalanche current (I_AS) versus avalanche time (t_AV);
unclamped inductive load
June 2000
6
Rev 1.000