PSMN030-150P Datasheet, PDF (1/8 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
PSMN030-150P
FEATURES
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
V_DSS = 150 V
I_D = 55.5 A
R_DS(ON) ≤ 30 mΩ
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN030-150P is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING
SOT78 (TO220AB)
PIN
DESCRIPTION
tab
1
gate
2
drain
3
source
tab drain
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
T_j = 25 ˚C to 175˚C
T_j = 25 ˚C to 175˚C; R_GS = 20 kΩ
T_mb = 25 ˚C
T_mb = 100 ˚C
T_mb = 25 ˚C
T_mb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
150
150
± 20
55.5
39
222
250
175
UNIT
V
V
V
A
A
A
W
˚C
June 2000
1
Rev 1.000