PSMN030-150P Datasheet, PDF (4/8 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PSMN030-150P
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
Mounting Base temperature, Tmb (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
Mounting Base temperature, Tmb (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb)
1000 ^{Peak Pulsed Drain Current, IDM (A)}
RDS(on) = VDS/ ID
100
tp = 10 us
10
D.C.
100 us
1 ms
10 ms
100 ms
1
1
10
100
1000
Drain-Source Voltage, VDS (V)
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
1 ^{Transient thermal impedance, Zth j-mb (K/W)}
D = 0.5
0.2
0.1 _0.1
0.05
0.02
0.01
PD _tp D = tp/T
single pulse
0.001
1E-06
1E-05
1E-04 1E-03 1E-02
Pulse width, tp (s)
T
1E-01
1E+00
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
Drain Current, ID (A)
70
65 ^{Tj = 25 C}
60
55
8V
50
45
40
35
30
25
20
15
10
5
0
VGS = 10 V
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Drain-Source Voltage, VDS (V)
6V
5.4 V
5.2 V
5V
4.8 V
4.6 V
4.4 V
1.8 2
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
Drain-Source On Resistance, RDS(on) (Ohms)
0.07 _{4.4 V 4.6 V 4.8 V}
5V
0.06
V
5.2 V
Tj = 25 C
0.05
5.4 V
0.04
6V
0.03
0.02
VGS = 10V
0.01
8V
0
0 5 10 15 20 25 30 35 40 45 50
Drain Current, ID (A)
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(V_GS)
June 2000
4
Rev 1.000