PSMN022-30BL_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMN022-30BL
N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK
Table 7. Characteristics …continued
Symbol
Parameter
Conditions
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
V_DS = 15 V; R_L = 1.5 Ω; V_GS = 4.5 V;
R_G(ext) = 4.7 Ω
V_SD
source-drain voltage I_S = 5 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 5 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 15 V
Min Typ Max Unit
-
12 -
ns
-
29 -
ns
-
17 -
ns
-
7
-
ns
-
0.7 1.2 V
-
22 -
ns
-
10 -
nC
20
I_D
(A)
15
10 4.5
003aad422
V_GS (V) = 3.5
10
3
5
2.8
2.6
2.4
0
0
0.5
1
1.5
2
V_DS (V)
30
I_D
(A)
25
20
15
10
5
0
0
003aad424
T_j = 175 °C
T_j = 25 °C
1
2
3
4 _{VGS (V)} 5
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
PSMN022-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 March 2012
© NXP B.V. 2012. All rights reserved.
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