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PSMN022-30BL_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK
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NXP Semiconductors
PSMN022-30BL
N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK
103
ID
(A)
Limit RDSon = VDS / ID
102
10
1
10-1
1
DC
10
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tp = 10 μs
100 μs
1 ms
10 ms
100 ms
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to see Figure 4
mounting base
thermal resistance from junction to minimum footprint; mounted on a
ambient
printed circuit board
Min Typ Max Unit
-
3.1 3.6 K/W
-
50 -
K/W
10
Zth (j-mb)
(K/W)
1
10−1
δ = 0.5
0.2
0.1
0.05
0.02
single shot
003aad356
P
δ = tp
T
10−2
10−6
10−5
10−4
10−3
10−2
tp
t
T
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN022-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 March 2012
© NXP B.V. 2012. All rights reserved.
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