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| PSMN022-30BL_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK | |||
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NXP Semiconductors
PSMN022-30BL
N-channel 30 V 22.6 m⦠logic level MOSFET in D2PAK
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp ⤠10 µs; Tmb = 25 °C;
see Figure 3
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 30 A;
Vsup ⤠30 V; RGS = 50 â¦; unclamped
Min Max Unit
-
30 V
-
30 V
-20 20 V
-
22 A
-
30 A
-
125 A
-
41 W
-55 175 °C
-55 175 °C
-
260 °C
-
30 A
-
125 A
-
7
mJ
50
ID
(A)
40
30
20
10
0
0
003aad360
50
100
150
200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN022-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 21 March 2012
© NXP B.V. 2012. All rights reserved.
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