PSMN005-75P Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.

Philips Semiconductors
PSMN005-75P/75B
N-channel enhancement mode field-effect transistor
300
I_D
T_j = 25 ºC ^{7.5 V}
(A)
8V
10 V
200
20 V
100
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7V
6.5 V
6V
5.5 V
5V
100
I_D
(A)
80
V_DS > I_D x R_DSon
60
T_j = 175 ºC
40
20
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25 ºC
V_GS = 4.5 V
0
0
0.5
1
1.5 _{VDS (V)} 2
0
0
1
2
3
4
5
6
V_GS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.015
R_DSon
(Ω)
0.01
5V
5.5 V
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T_j = 25 ºC
6V
2.5
a
2
1.5
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0.005
6.5 V
1
V_GS = 20 V 10 V
0
0
100
8V 7V
200
300
I_D (A)
0.5
0
-60
0
60
120
180
T_j (ºC)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09743
Product data
Rev. 01 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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