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| PSMN005-75P Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. | |||
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Philips Semiconductors
PSMN005-75P/75B
N-channel enhancement mode ï¬eld-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = â55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = â55 °C
VDS = 75 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 75 A; VDD = 60 V; VGS = 10 V;
Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 11
VDD = 15 V; ID = 12 A; VGS = 10 V;
RG = 6 â¦; resistive load
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
Min Typ Max Unit
75 -
-
V
67 -
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
0.02 1
µA
-
-
500 µA
-
10 100 nA
-
4.3 5.0 mâ¦
-
9.25 10.75 mâ¦
-
165 -
nC
-
32 -
nC
-
50 -
nC
-
8250 -
pF
-
920 -
pF
-
470 -
pF
-
37 -
ns
-
73 -
ns
-
144 -
ns
-
74 -
ns
-
0.8 1.2 V
9397 750 09743
Product data
Rev. 01 â 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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