PSMN005-75P Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.

Philips Semiconductors
PSMN005-75P/75B
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C ≤ T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V
T_mb = 25 °C
V_GS = 10 V; I_D = 25 A; T_j = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
V_GSM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
I_D
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
25 °C ≤ T_j ≤ 175 °C
25 °C ≤ T_j ≤ 175 °C; R_GS = 20 kΩ
t_p ≤ 50 µs; pulsed;
duty cycle 25%; T_j ≤ 150 °C
T_mb = 25 °C; V_GS = 10 V; Figure 2 and 3
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_mb = 25 °C; Figure 1
I_S
source (diode forward) current (DC)
I_SM
peak source (diode forward) current
Avalanche ruggedness
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
E_DS(AL)S non-repetitive avalanche energy
I_DS(AL)S non-repetitive avalanche current
unclamped inductive load;
I_D = 75 A; t_p = 0.1 ms; V_DD = 15 V;
R_GS = 50 Ω; V_GS = 10 V; starting T_j = 25 °C
unclamped inductive load;
V_DD = 15 V; R_GS = 50 Ω; V_GS = 10 V;
starting T_j = 25 °C
Typ
Max Unit
-
75
V
-
75
A
-
230
W
-
175
°C
4.3
5.0
mΩ
Min
Max Unit
-
75
V
-
75
V
-
±20
V
-
±30
V
-
75
A
-
75
A
-
400
A
-
230
W
−55
+175 °C
−55
+175 °C
-
75
A
-
400
A
-
500
mJ
-
75
A
9397 750 09743
Product data
Rev. 01 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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