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PMZB1200UPE_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – 30 V, P-channel Trench MOSFET
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NXP Semiconductors
PMZB1200UPE
30 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = -30 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -410 mA; Tj = 25 °C
VGS = -4.5 V; ID = -410 mA; Tj = 150 °C
VGS = -2.5 V; ID = -320 mA; Tj = 25 °C
VGS = -1.8 V; ID = -80 mA; Tj = 25 °C
VGS = -1.5 V; ID = -10 mA; Tj = 25 °C
gfs
forward
VDS = -10 V; ID = -200 mA; Tj = 25 °C
transconductance
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = -15 V; ID = -410 mA;
VGS = -4.5 V; Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = -15 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = -15 V; ID = -410 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = -410 mA; VGS = 0 V; Tj = 25 °C
PMZB1200UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 March 2015
Min Typ Max Unit
-30 -
-
V
-0.45 -0.7 -0.95 V
-
-
-1
µA
-
-
5
µA
-
-
-5
µA
-
-
1
nA
-
-
-1
nA
-
-
100 nA
-
-
-100 nA
-
1.2 1.4 Ω
-
2
2.4 Ω
-
1.7 2.3 Ω
-
2.1 3.1 Ω
-
3
5.1 Ω
-
820 -
mS
-
0.7 1.2 nC
-
0.2 -
nC
-
0.2 -
nC
-
43.2 -
pF
-
5.9 -
pF
-
4.2 -
pF
-
3
-
ns
-
4
-
ns
-
14
-
ns
-
5
-
ns
-
-0.95 -1.2 V
© NXP Semiconductors N.V. 2015. All rights reserved
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