PMZB1200UPE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, P-channel Trench MOSFET

PMZB1200UPE
30 V, P-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• Ultra thin package profile of 0.37 mm height
3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C
[1]
Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -410 mA; T_j = 25 °C
resistance
Min Typ Max Unit
-
-
-30 V
-8
-
8
V
-
-
-410 mA
-
1.2 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm².
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