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PMEG4010EJ Datasheet, PDF (6/12 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifiers
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Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low VF MEGA Schottky barrier rectifiers
103
IF
(mA)
102
006aaa250
(1)
(2) (3)
(4)
(5)
10
1
10−1
10−2
0
0.1
0.2
0.3
0.4
0.5
VF (V)
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb = 85 °C
(4) Tamb = 25 °C
(5) Tamb = −40 °C
Fig 4. PMEG3010EH, PMEG3010EJ: Forward current
as a function of forward voltage; typical values
IR 105
(µA)
(1)
104
(2)
103
(3)
006aaa251
102
10
(4)
1
10−1
10−2
10−3
0
(5)
10
20
30
VR (V)
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb = 85 °C
(4) Tamb = 25 °C
(5) Tamb = −40 °C
Fig 5. PMEG3010EH, PMEG3010EJ: Reverse current
as a function of reverse voltage; typical values
120
Cd
(pF)
80
006aaa252
40
0
0
10
20
30
VR (V)
Tamb = 25 °C; f = 1 MHz
Fig 6. PMEG3010EH, PMEG3010EJ: Diode capacitance as a function of reverse voltage; typical values
9397 750 14817
Product data sheet
Rev. 03 — 11 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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