PMEG4010EJ Datasheet, PDF (4/12 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifiers

Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V_F MEGA Schottky barrier rectifiers
7. Characteristics
Table 8: Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
V_F
forward voltage
PMEG2010EH, PMEG2010EJ
PMEG3010EH, PMEG3010EJ
PMEG4010EH, PMEG4010EJ
I_R
reverse current
PMEG2010EH, PMEG2010EJ
PMEG3010EH, PMEG3010EJ
PMEG4010EH, PMEG4010EJ
C_d
diode capacitance
PMEG2010EH, PMEG2010EJ
PMEG3010EH, PMEG3010EJ
PMEG4010EH, PMEG4010EJ
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Conditions
I_F = 0.1 mA
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
I_F = 500 mA
I_F = 1000 mA
I_F = 0.1 mA
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
I_F = 500 mA
I_F = 1000 mA
I_F = 0.1 mA
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
I_F = 500 mA
I_F = 1000 mA
V_R = 10 V
V_R = 20 V
V_R = 10 V
V_R = 30 V
V_R = 10 V
V_R = 40 V
V_R = 1 V;
f = 1 MHz
Min
[1]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Unit
90
130 mV
150 190 mV
210 240 mV
280 330 mV
355 390 mV
420 500 mV
90
130 mV
150 200 mV
215 250 mV
285 340 mV
380 430 mV
450 560 mV
95
130 mV
155 210 mV
220 270 mV
295 350 mV
420 470 mV
540 640 mV
15
40
µA
40
200 µA
12
30
µA
40
150 µA
7
20
µA
30
100 µA
66
80
pF
55
70
pF
43
50
pF
9397 750 14817
Product data sheet
Rev. 03 — 11 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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