PMEG4010EJ Datasheet, PDF (3/12 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifiers

Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V_F MEGA Schottky barrier rectifiers
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_R
reverse voltage
PMEG2010EH, PMEG2010EJ
-
PMEG3010EH, PMEG3010EJ
-
PMEG4010EH, PMEG4010EJ
-
I_F
forward current
T_sp ≤ 55 °C
-
I_FRM
repetitive peak forward current
t_p ≤ 1 ms; δ ≤ 0.25
-
I_FSM
non-repetitive peak forward current square wave;
-
t_p = 8 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
SOD123F
[1] _-
[2] _-
SOD323F
[1] _-
[2] _-
T_j
junction temperature
-
T_amb ambient temperature
−65
T_stg
storage temperature
−65
Max Unit
20
V
30
V
40
V
1
A
7
A
9
A
375 mW
830 mW
350 mW
830 mW
150 °C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
6. Thermal characteristics
Table 7:
Symbol
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction in free air
to ambient
SOD123F
SOD323F
R_th(j-sp)
thermal resistance from junction
to solder point
SOD123F
SOD323F
Min Typ Max Unit
[1]
[2] _-
-
330 K/W
[3] _-
-
150 K/W
[2] _-
-
350 K/W
[3] _-
-
150 K/W
-
-
60 K/W
-
-
55 K/W
[1] Schottky barrier rectifier thermal run-away has to be considered, as in some applications the reverse power
losses P_R are a significant part of the total power losses. Nomograms for determining the reverse power
losses P_R and I_F(AV) rating are available on request.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
9397 750 14817
Product data sheet
Rev. 03 — 11 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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