PIP202-12M Datasheet, PDF (6/20 Pages) NXP Semiconductors – DC to DC converter powertrain

Philips Semiconductors
PIP202-12M
DC to DC converter powertrain
9. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
R_th(j-pcb)
thermal resistance from
junction to printed-circuit
board
-
4
5
R_th(j-a)
thermal resistance from
junction to ambient
device mounted on FR4
printed-circuit board; copper
area around device 25 × 25 mm
no thermal vias
-
25
-
with thermal vias
-
20
-
with thermal vias and forced
-
air cooling; airflow = 0.8 ms^-1
(150 LFM)
15
-
R_th(j-c)
thermal resistance from measured on upper surface of
-
junction to case
package.
11
-
10. Characteristics
Table 5: Characteristics
V_DDC = 12 V; T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Static characteristics
V_DDC
control circuit supply voltage 25 °C ≤ T_j ≤ 150 °C
7
12
V_IH
HIGH-level input voltage
25 °C ≤ T_j ≤ 150 °C
[1] _2.55
2.8
V_IL
LOW-level input voltage
25 °C ≤ T_j ≤ 150 °C
[1] _1.95
2.1
I_LI
input leakage current
0 V ≤ V_I ≤ 5 V
-
0.3
I_DDC
control circuit supply current f_i = 0 Hz
-
1.5
f_i = 500 kHz; Figure 10
-
45
P_tot
total power dissipation
V_DDO = 12 V; I_O(AV) = 20 A;
-
4.5
f_i = 500 kHz; V_O = 1.6 V;
T_pcb ≤ 120 °C; Figure 6
Dynamic characteristics
t_d(on)(IH-OH) turn-on delay time input HIGH V_DDO = 12 V; I_O(AV) = 25 A
-
77
to output HIGH
t_{d(off)(IL-OL)} turn-off delay time input LOW
to output LOW
-
30
t_o(r)
t_o(f)
t_d(3-state)
output rise time
output fall time
3-state enable delay time
-
18
-
12
115
144
Max
14
3.05
2.25
1.2
3
60
5.7
85
45
25
20
173
[1] If the input voltage remains between V_IH and V_IL (2.5 V typ) for longer than t_d(3-state), then both MOSFETs are turned off.
Unit
K/W
K/W
K/W
K/W
K/W
Unit
V
V
V
mA
mA
mA
W
ns
ns
ns
ns
ns
9397 750 10031
Product data
Rev. 01 — 15 July 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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