PHX3055E Datasheet, PDF (6/8 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHX3055E
Gate-source voltage, VGS (V)
15
14 ^{ID = 10A}
13 Tj = 25 C
12
11
VDD = 11 V
10
9
VDD = 44 V
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
Gate charge, QG (nC)
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G)
Source-Drain Diode Current, IF (A)
10
VGS = 0 V
9
8
7
6
5
175 C
4
3
Tj = 25 C
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Source-Drain Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
Maximum Avalanche Current, IAS (A)
100
10
25 C
1
Tj prior to avalanche = 125 C
0.1
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Fig.15. Maximum permissible non-repetitive
avalanche current (I_AS) versus avalanche time (t_AV);
unclamped inductive load
August 1999
6
Rev 1.000