PHX3055E Datasheet, PDF (2/8 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHX3055E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
E_AS
Non-repetitive avalanche Unclamped inductive load, I_AS = 3.3 A;
energy
t_p = 220 µs; T_j prior to avalanche = 25˚C;
V_DD ≤ 25 V; R_GS = 50 Ω; V_GS = 10 V; refer
to fig:15
I_AS
Peak non-repetitive
avalanche current
MIN.
-
MAX.
25
UNIT
mJ
-
9
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-hs}
R_{th j-a}
Thermal resistance junction
to heatsink
Thermal resistance junction
to ambient
CONDITIONS
TYP.
-
55
MAX.
6
-
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
R_DS(ON)
g_fs
I_GSS
I_DSS
Q_g(tot)
Q_gs
Q_gd
t_{d on}
t_r
t_{d off}
t_f
L_d
L_s
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V_GS = 0 V; I_D = 0.25 mA;
V_DS = V_GS; I_D = 1 mA
V_GS = 10 V; I_D = 5.5 A
V_DS = 25 V; I_D = 5.5 A
V_GS = ±10 V; V_DS = 0 V
V_DS = 55 V; V_GS = 0 V;
T_j = -55˚C
T_j = 150˚C
T_j = -55˚C
T_j = 150˚C
T_j = 150˚C
I_D = 10 A; V_DD = 44 V; V_GS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V_DD = 30 V; R_D = 2.7 Ω;
R_G = 5.6 Ω; V_GS = 10 V
Resistive load
Internal drain inductance
Internal source inductance
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
55 -
-
V
50 -
-
V
2.0 3.0 4.0 V
1.1 -
-
V
-
-
6
V
- 120 150 mΩ
- 210 263 mΩ
1.5 3.2 -
S
- 10 100 nA
- 0.05 10 µA
-
- 100 µA
- 5.8 - nC
- 1.5 - nC
- 3.2 - nC
-
3 10 ns
- 26 35 ns
-
8 15 ns
- 10 20 ns
- 4.5 - nH
- 7.5 - nH
- 190 250 pF
- 55 80 pF
- 40 50 pF
August 1999
2
Rev 1.000