PHX14NQ20T Datasheet, PDF (6/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX14NQ20T , PHF14NQ20T
Gate-source voltage, VGS (V)
14
12
10
VDD = 40 V
8
6
VDD = 160 V
4
2
0
0
10
20
30
40
Gate charge, QG (nC)
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 14 A; parameter V_DS
Source-Drain Diode Current, IF (A)
30
VGS = 0 V
20
150 C
Tj = 25 C
10
Maximum Avalanche Current, IAS (A)
100
10
25 C
1
Tj prior to avalanche = 150 C
0.1
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Fig.15. Maximum permissible non-repetitive
avalanche current (I_AS) versus avalanche time (t_AV);
unclamped inductive load
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Source-Drain Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
November 2000
6
Rev 1.100